View STB200NF04L_7683259.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1/12 april 2005 stp200nf04l STB200NF04L - STB200NF04L-1 n-channel 40v - 3 m ? - 120 a to-220/d2pak/i2pak stripfet? ii mosfet table 1: general features typical r ds(on) = 3 m ? 100% avalanche tested low thereshold drive description this mosfet is the latest development of stmi- croelectronics unique ?single feature size?? stripbased process. the resulting transistor shows extremely high packing density for low on-resis- tance, rugged avalanche characteristics and less- critical alignement steps therefore a remarkable manufacturing reproducibility. this new improved device has been specifically designed for automo- tive applications. applications high current, high switching speed table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss r ds(on) i d STB200NF04L stp200nf04l STB200NF04L-1 40 v 40 v 40 v 3.5 m ? 3.8 m ? 3.8 m ? 120 a 120 a 120 a 1 2 3 1 3 1 2 3 to-220 d2pak i2pak part number marking package packaging stp200nf04l p200nf04l to-220 tube STB200NF04L b200nf04l d 2 pak tape & reel STB200NF04L-1 b200nf04l i 2 pak tube rev. 1
stp200nf04l - STB200NF04L - STB200NF04L-1 2/12 table 3: absolute maximum ratings (1)i sd 100 a, di/dt 240 a/s, v dd 32 , t j t jmax (2) pulse width limited by safe operating area. (3) starting t j = 25 c, i ar = 50a, v dd = 30v (**) current limited by package table 4: thermal data (*)when mounted on 1 inch 2 fr4 2oz cu electrical characteristics (t case =25 c unless otherwise specified) table 5: on/off symbol parameter value unit v ds drain-source voltage (v gs = 0) 40 v v gdr drain-gate voltage (r gs =20 k ?) 40 v v gs gate- source voltage 16 v i d (**) drain current (continuous) at t c = 25 c 120 a i d drain current (continuous) at t c = 100 c 120 a i dm (2) drain current (pulsed) 480 a p tot total dissipation at t c = 25 c 300 w derating factor 2 w/ c dv/dt (1) peak diode recovery voltage slope 3.6 v/ns e as (3) single pulse avalanche energy 1.4 j t stg storage temperature -55 to 175 c t j max. operating junction temperature to-220/i2pak d2pak unit rthj-case thermal resistance junction-case max 0.50 c/w rthj-pcb (*) thermal resistance junction-pcb max 35 c/w rthja thermal resistance junction-ambient max 62.5 -- t l maximum lead temperature for soldering purpose 300 -- c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 40 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v d = max rating, t c = 125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 16v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 1 4v r ds(on) static drain-source on resistance v gs = 10 v, i d = 50 a v gs = 5 v, i d = 50 a to-220 i2pak 3.3 3.8 3.8 4.6 m ? m ? v gs = 10 v, i d = 50 a v gs = 5 v, i d = 50 a d2pak 3.0 3.5 3.5 4.3 m ? m ?
3/12 stp200nf04l - STB200NF04L - STB200NF04L-1 electrical characteristics (continued) table 6: dynamic table 7: source drain diode (1) pulse width limited by safe operating area (4). pulsed: pulse duration = 300 s, duty cycle 1.5 %. symbol parameter test conditions min. typ. max. unit g fs (4) forward transconductance v ds = 15 v , i d = 20 a 60 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 6400 1300 190 pf pf pf t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 20 v, i d = 50 a, r g = 4.7 ? v gs = 4.5 v (see figure 16) 37 270 90 80 ns ns ns ns t f(voff) t f t c turn-off delay time fall time cross-over time v clamp = 32 v, i d = 100 a, r g = 4.7 ? v gs = 4.5 v (see figure 17) 85 125 160 ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 32 v, i d = 100 a, v gs = 4.5 v (see figure 19) 72 20 28.5 90 nc nc nc symbol parameter test conditions min. typ. max. unit i sd source-drain current 100 a i sdm (1) source-drain current (pulsed) 400 a v sd (4) forward on voltage i sd = 160 a, v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 100 a, di/dt = 100 a/s, v dd = 20 v, t j = 150 c (see figure 16) 88 240 5.5 ns nc a
stp200nf04l - STB200NF04L - STB200NF04L-1 4/12 figure 3: safe operating area figure 4: output characteristics figure 5: transconductance figure 6: thermal impedance figure 7: transfer characteristics figure 8: static drain-source on resistance
5/12 stp200nf04l - STB200NF04L - STB200NF04L-1 figure 9: gate charge vs gate-source voltage figure 10: normalized gate thereshold volt- age vs temperature figure 11: source-drain diode forward char- acteristics figure 12: capacitance variations figure 13: normalized on resistance vs tem- perature figure 14: normalized breakdown voltage vs temperature
stp200nf04l - STB200NF04L - STB200NF04L-1 6/12 figure 15: unclamped inductive load test cir- cuit figure 16: switching times test circuit for resistive load figure 17: test circuit for inductive load switching and diode recovery times figure 18: unclamped inductive wafeform figure 19: gate charge test circuit
7/12 stp200nf04l - STB200NF04L - STB200NF04L-1 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ? p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
stp200nf04l - STB200NF04L - STB200NF04L-1 8/12 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 a1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 d 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 e 10 10.40 0.393 0.410 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l2 1.27 1.40 0.050 0.055 to-262 (i 2 pak) mechanical data
9/12 stp200nf04l - STB200NF04L - STB200NF04L-1 to-247 mechanical data 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r0.4 0.015 v2 0 o 4 o d 2 pak mechanical data 3
stp200nf04l - STB200NF04L - STB200NF04L-1 10/12 tape and reel shipment d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
11/12 stp200nf04l - STB200NF04L - STB200NF04L-1 table 8: revision history date revision description of changes 11/apr/2005 1 first release.
stp200nf04l - STB200NF04L - STB200NF04L-1 12/12 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america

▲Up To Search▲

Price & Availability of STB200NF04L

	To Download STB200NF04L Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .